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rev. 4517f?rfid?11/03 features contactless read/write data transmission radio frequency f rf from 100 khz to 150 khz e5550 binary compatible or T5557 extended mode small size, configurable for iso/iec 11784/785 compatibility 75 pf on-chip resonant capacitor (mask option) 7 32-bit eeprom data memory including 32-bit password separate 64-bit memory for traceability data 32-bit configuration register in eeprom to setup: ?data rate - rf/2 to rf/128, binary selectable or - fixed e5550 data rates ? modulation/coding - fsk, psk, manchester, biphase, nrz ? other options - password mode - max block feature - answer-on-request (aor) mode - inverse data output - direct access mode - sequence terminator(s) - write protection (through lock-bit per block) - fast write method (5 kbps versus 2 kbps) - otp functionality - por delay up to 67 ms description the T5557 is a contactless r/w identification ic (idic ? ) for applications in the 125 khz frequency range. a single coil, connected to the chip, serves as the ic?s power supply and bi-directional communication interface. the antenna and chip together form a transponder or tag. the on-chip 330-bit eeprom (10 blocks, 33 bits each) can be read and written block- wise from a reader. block 0 is reserved for setting the operation modes of the T5557 tag. block 7 may contain a password to prevent unauthorized writing. data is transmitted from the idic using load modulation. this is achieved by damping the rf field with a resistive load between the two terminals coil 1 and coil 2. the ic receives and decodes 100% amplitude modulated (ook) pulse interval encoded bit streams from the base station or reader. system block diagram figure 1. rfid system using T5557 tag base station data power transponder reader or base station data T5557 power * mask option * controller coil interface memory multifunctional 330-bit read/write rf-identification ic T5557
2 T5557 4517f?rfid?11/03 T5557 ? building blocks figure 2. block diagram analog front end (afe) the afe includes all circuits which are directly connected to the coil. it generates the ic?s power supply and handles the bi-directional data communication with the reader. it consists of the following blocks: rectifier to generate a dc supply voltage from the ac coil voltage clock extractor switchable load between coil 1/coil 2 for data transmission from tag to the reader field gap detector for data transmission from the base station to the tag esd protection circuitry data-rate generator the data rate is binary programmable to operate at any data rate between rf/2 and rf/128 or equal to any of the fixed e5550/e5551 and t5554 bitrates (rf/8, rf/16, rf/32, rf/40, rf/50, rf/64, rf/100 and rf/128). write decoder this function decodes the write gaps and verifies the validity of the data stream according to the atmel e555x write method (pulse interval encoding). hv generator this on-chip charge pump circuit generates the high voltage required for programming of the eeprom. dc supply power is externally supplied to the idic via the two coil connections. the ic rectifies and regulates this rf source and uses it to generate its supply voltage. * mask option * coil 1 coil 2 modulator a n a l o g f r o n t e n d por input register w r i t e d e c o d e r b i t - r a t e g e n e r a t o r memory (330-bit eeprom) controller test logic mode register hv generator
3 T5557 4517f?rfid?11/03 power-on reset (por) this circuit delays the idic functionality until an acceptable voltage threshold has been reached. clock extraction the clock extraction circuit uses the external rf signal as its internal clock source. controller the control-logic module executes the following functions: load-mode register with configuration data from eeprom block 0 after power-on and also during reading control memory access (read, write) handle write data transmission and write error modes the first two bits of the reader to tag data stream are the opcode, e.g., write, direct access or reset in password mode, the 32 bits received after the opcode are compared with the password stored in memory block 7 mode register the mode register stores the configuration data from the eeprom block 0. it is continually refreshed at the start of ev ery block read and (re-)loaded after any por event or reset command. on delivery the mode register is preprogrammed with the value ?0014 8000?h which corresponds to continuous read of block 0, manchester coded, rf/64. figure 3. block 0 configuration mapping ? e5550 compatibility mode 000 001 010 011 100 101 110 111 rf/8 rf/16 rf/32 rf/40 rf/50 rf/64 rf/100 rf/128 st-sequence terminator safer key note 1), 2) l 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 0 1 1 0 0 0 0 0 0 0 0 0 0 0 0 data bit rate 00 01 10 11 rf/2 rf/4 rf/8 res. 00000 00001 00010 00011 00100 00101 00110 00111 01000 10000 11000 direct psk1 psk2 psk3 fsk1 fsk2 fsk1a fsk2a manchester biphase('50) reserved psk- cf aor max- block 1) if master key = 6 then test mode write commands are ignored 2) if master key <> 6 or 9 then extended function mode is disabled modulation 0 unlocked 1 locked lock bit pwd por delay
4 T5557 4517f?rfid?11/03 modulator the modulator consists of data encoders for the following basic types of modulation: table 1. types of e5550-compatible modulation modes notes: 1. a common multiple of bitrate and fsk frequencies is recommended. 2. in psk mode the selected data rate has to be an integer multiple of the psk sub-carrier frequency. memory the memory is a 330-bit eeprom, which is arranged in 10 blocks of 33 bits each. all 33 bits of a block, including the lock bit, are programmed simultaneously. block 0 of page 0 contains the mode/configuration data, which is not transmitted during regular-read operations. block 7 of page 0 may be used as a write protection password. bit 0 of every block is the lock bit for that block. once locked, the block (including the lock bit itself) is not re-programmable through the rf field again. blocks 1 and 2 of page 1 contain traceability data and are transmitted with the modula- tion parameters defined in the configuration register after the opcode ?11? is issued by the reader (see figure 11 on page 9). these tracebility data blocks are programmed and locked by atmel. figure 4. memory map mode direct data output fsk1a (1) fsk/8-/5 ?0? = rf/8; ?1? = rf/5 fsk2a (1) fsk/8-/10 ?0? = rf/8; ?1? = rf/10 fsk1 (1) fsk/5-/8 ?0? = rf/5; ?1? = rf/8 fsk2 (1) fsk/10-/8 ?0? = rf/10; 1? = rf/8 psk1 (2) phase change when input changes psk2 (2) phase change on bit clock if input high psk3 (2) phase change on rising edge of input manchester ?0? = falling edge, ?1? = rising edge biphase ?1? creates an additional mid-bit change nrz ?1? = damping on, ?0? = damping off l l l l l l l l block 7 block 6 block 5 block 4 block 3 block 2 block 1 block 0 user data or password 32 bits user data user data user data user data user data user data configuration data 132 0 not transmitted block 2 block 1 traceability data traceability data 1 1 page 1 page 0
5 T5557 4517f?rfid?11/03 traceability data structure blocks 1 and 2 of page 1 contain the traceability data and are programmed and locked by atmel during production testing. the most significant byte of block 1 is fixed to ?e0?hex, the allocation class (acl) as defined in iso/iec 15963-1. the second byte is therefore defined as the manufacturer?s id of atmel (= ?15?hex). the following 8 bits are used as ic reference byte (icr - bits 47 to 40). the 3 most significant bits define the ic and/or foundry version of the T5557. the lower 5 bits are by default reset (=00) as the atmel standard value. other values may be assigned on request to high volume custom- ers as tag issuer identification. the lower 40 bits of the data encode the traceability information of atmel and conform to a unique numbering system. these 40 data bits are divided in two sub-groups, a 5-digit lot id number, the binary wafer number (5 bit) concatenated with the sequential die number per wafer. figure 5. T5557 traceability data structure acl allocation class as defined in iso/iec 15963-1 = e0h mfc manufacturer code of atmel corporation as defined in iso/iec 7816-6 = 15h icr ic reference of silicon and/or tag manufacturer top 3 bits define ic revision lower 5 bits may contain a customer id code on request msn manufacturer serial number consists of: lotid 5-digit lot number, e.g., ?38765? dpw 20 bits encoded as sequential die per wafer number (with top 5 bits = wafer#) operating the T5557 initialization and por delay the power-on-reset (por) circuit remains active until an adequate voltage threshold has been reached. this in turn triggers the default start-up delay sequence. during this configuration period of about 192 field clocks, the T5557 is initialized with the configu- ration data stored in eeprom block 0. during initialization of the configuration block 0, all T55570x variants the load damping is active permanently (see figure 10 on page 9). the T55571x types (without damping option) achieve a longer read range based on the lower activation field strength. if the por-delay bit is reset, no additional delay is observed after the configuration period. tag modulation in regular-read mode will be observed about 3 ms after entering the rf field. if the por delay bit is set, the T5557 remains in a permanent damping state until 8190 internal field clocks have elapsed. t init = (192 + 8190 por delay) t c 67 ms ; t c = 8 s at 125 khz 12 32 31 1 ... 13 ... traceability wafer # mfc icr block 2 block 1 1 ... 8 16 17 9 ... acl msn lotid ... 24 20 12 25 ... 32 8 die on wafer # lotid 18 19 ... example: ' e0 ' ' 15 ' ' 00 ' ' 41 ' ' 557 '
6 T5557 4517f?rfid?11/03 any field gap occurring during this initialization phase will restart the complete sequence. after this initialization time the T5557 enters regular-read mode and modula- tion starts automatically using the parameters defined in the configuration register. tag to reader communication during normal operation, the data stored wi thin the eeprom is cycled and the coil 1, coil 2 terminals are load modulated. this resistive load modulation can be detected at the reader module. regular-read mode in regular-read mode data from the memory is transmitted serially, starting with block 1, bit 1, up to the last block (e.g., 7), bit 32. the last block which will be read is defined by the mode parameter field maxblk in eeprom block 0. when the data block addressed by maxblk has been read, data transmission restarts with block 1, bit 1. the user may limit the cyclic datastream in regular-read mode by setting the maxblk between 0 and 7 (representing each of the 8 data blocks). if set to 7, blocks 1 through 7 can be read. if set to 1, only block 1 is transmitted continously. if set to 0, the contents of the configuration block (normally not transmitted) can be read. in the case of maxblk = 0 or 1, regular-read mode can not be distinguished from block-read mode. figure 6. examples for different maxblk settings every time the T5557 enters regular- or block-read mode, the first bit transmitted is a logical ?0?. the data stream starts with block 1, bit 1, continues through maxblk, bit 32, and cycles continuously if in regular-read mode. note: this behavior is different from the original e555x and helps to decode psk-modulated data. block-read mode with the direct access command, the address ed block is repetitively read only. this mode is called block-read mode. direct access is entered by transmitting the page access opcode (?10? or ?11?), a single ?0? bit and the requested 3-bit block address when the tag is in normal mode. in password mode (pwd bit set), the direct access to a single block needs the valid 32-bit password to be transmitted after the page access opcode whereas a ?0? bit and the 3-bit block address follow afterwards. in case the transmitted password does not match with the contents of block 7, the T5557 tag returns to the regular-read mode. note: a direct access to block 0 of page 1 will read the configuration data of block 0, page 0. a direct access to bock 3 .. 7 of page 1 reads all data bits as zero. e5550 sequence terminator the sequence terminator st is a special dam ping pattern which is inserted before the first block and may be used to synchronize the reader. this e5550-compatible sequence terminator consists of 4 bi t periods with underlaying data values of ?1?. during the second and the fourth bit period, modulation is switched off (manchester encoding ? switched on). biphase modulated data blocks need fixed leading and trailing bits in com- bination with the sequence terminator to be identified reliable. block 1 block 4 block 5 block 1 block 2 maxblk = 5 maxblk = 2 maxblk = 0 block 1 block 2 block 1 block 2 block 1 block 0 block 0 block 0 block 0 block 0 0 0 0 loading block 0 loading block 0 loading block 0
7 T5557 4517f?rfid?11/03 the sequence terminator may be individually enabled by setting of mode bit 29 (st = ?1?) in the e5550-compatibility mode (x-mode = ?0?). in the regular-read mode, the sequence terminator is inserted at the start of each maxblk-limited read data stream. in block-read mode ? after any block-write or direct access command ? or if maxblk was set to 0 or 1, the sequence terminator is inserted before the transmission of the selected block. especially this behavior is different to former e5550 ? compatible ics (t5551, t5554). figure 7. read data stream with sequence terminator figure 8. e5550-compatible sequence terminator waveforms reader to tag communication data is written to the tag by interrupting the rf field with short field gaps (on-off keying) in accordance with the e5550 write method. the time between two gaps encodes the ?0/1? information to be transmitted (pulse interval encoding). the duration of the gaps is usually 50 s to 150 s. the time between two gaps is nominally 24 field clocks for a ?0? and 54 field clocks for a ?1?. when there is no gap for more than 64 field clocks after a previous gap, the T5557 exits the write mode. the tag starts with the command execu- tion if the correct number of bits were received. if there is a failure detected the T5557 does not continue and will enter regular-read mode. start gap the initial gap is referred to as the start gap. this triggers the reader to tag communica- tion. during this mode of operation, the receive damping is permanently enabled to ease gap detection. the start gap may need to be longer than subsequent gaps in order to be detected reliably. block 1 block 2 maxblk block 1 block 2 block 1 block 2 maxblk block 1 block 2 no terminator st = on sequence terminator sequence terminator regular read mode last bit first bit manchester bit period modulation off (on) data '1' data '1' modulation off (on) bit '1' or '0' fsk sequence waveforms per different modulation types v coil pp data '1' data '1' sequence terminator not suitable for biphase or psk modulation
8 T5557 4517f?rfid?11/03 a start gap will be accepted at any time after the mode register has been loaded ( 3 ms). a single gap will not change the previously selected page (by former opcode ?10? or ?11?). figure 9. start of reader to tag communication table 2. write data decoding scheme write data protocol the T5557 expects to receive a dual bit opcode as the first two bits of a reader com- mand sequence. there are three valid opcodes: the opcodes ?10? and ?11? precede all block write and direct access operations for page 0 and page 1 the reset opcode ?00? initiates a por cycle the opcode ?01? precedes all test mode write operations. any test mode access is ignored after master key (bits 1..4) in block 0 has been set to ?6?. any further modifications of the master key are prohibited by setting the lock bit of block 0 or the otp bit. writing has to follow these rules: standard write needs the opcode, the lock bit, 32 data bits and the 3-bit address (38 bits total) protected write (pwd bit set) requires a valid 32-bit password between opcode and data, address bits for the aor wake-up command an opcode and a valid password are necessary to select and activate a specific tag note: the data bits are read in the same order as written. if the transmitted command sequence is invalid, the T5557 enters regular-read mode with the previously selected page (by former opcode ?10? or ?11?). parameters remark symbol min. max. unit start gap s gap 10 50 fc write gap normal write mode w gap 8 30 fc write data in normal mode ?0? data d 0 16 31 fc ?1? data d 1 48 63 fc write mode read mode d 0 d 1 w gap s gap
9 T5557 4517f?rfid?11/03 figure 10. complete writing sequence figure 11. T5557 command formats password when password mode is active (pwd = 1), the first 32 bits after the opcode are regarded as the password. they are compared bit by bit with the contents of block 7, starting at bit 1. if the comparison fails, the T5557 will not program the memory, instead it will restart in regular-read mode once the command transmission is finished. note: in password mode, maxblk should be set to a value below 7 to prevent the password from being transmitted by the T5557. each transmission of the direct access command (two opcode bits, 32 bits password, ?0? bit plus 3 address bits = 38 bits) needs about 18 ms. testing all possible combinations (about 4.3 billion) takes about two years. answer-on-request (aor) mode when the aor bit is set, the T5557 does not start modulation in the regular-read mode after loading configuration block 0. the tag waits for a valid aor data stream (?wake-up command?) from the reader before modulation is enabled. the wake-up command consists of the opcode (?10?) followed by a valid password. the selected tag will remain active until the rf field is turned off or a new command with a different password is transmitted which may address another tag in the rf field. por block 0 loading read mode block address programming block data lock bit opcode read mode start gap write mode T55571x T555701 aor (wake-up command) protected write standard write direct access (pwd = 1) reset command opcode l 1 data 32 2 addr 0 1 password 32 l 1 data 32 2 addr 0 10 1 password 32 1 password 32 2 addr 0 direct access (pwd = 0) 2 addr 0 00 page 0/1 regular read 0 0 * p = page selector 1p * 1p * 1p * 1p * 1p *
10 T5557 4517f?rfid?11/03 table 3. T5557 ? modes of operation figure 12. answer-on-request (aor) mode figure 13. coil voltage after programming of a memory block pwd aor behavior of tag after reset command or por de-activate function 11 answer-on-request (aor) mode: ? modulation starts after wake-up with a matching password ? programming needs valid password command with non-matching password deactivates the selected tag 10 password mode: ? modulation in regular-read mode starts after reset ? programming and direct access needs valid password 0-- normal mode: ? modulation in regular-read mode starts after reset ? programming and direct access without password no modulation because aor = 1 modulation aor wake-up command (with valid pwd) v coil 1- coil2 por loading block 0 T55571x T555701 v coil 1- coil 2 write data to tag programming and data verification read programmed memory block read block 1..maxblk 5.6 ms (block-read mode) (regular-read mode) por/ gap or single
11 T5557 4517f?rfid?11/03 figure 14. anticollision procedure using aor mode init tags with aor = '1' , pwd = '1' wait for t w > 2.5ms "select a single tag" send opcode + pwd => "wake up command" power on reset read configuration receive damping on reader tag password correct ? send block 1...maxblk decode data all tags read ? exit field off => on no yes no yes enter aor mode wait for opcode + pwd => "wake up command"
12 T5557 4517f?rfid?11/03 programming when all necessary information has been received by the T5557, programming may proceed. there is a clock delay between the end of the writing sequence and the start of programming. typical programming time is 5.6 ms. this cycle includes a data verification read to grant secure and correct programming. after programming was executed successfully, the T5557 enters block-read mode transmitting the block just programmed (see figure 13 on page 10). note: this timing and behavior is different from the e555x-family predecessors. error handling several error conditions can be detected to ensure that only valid bits are programmed into the eeprom. there are two error types, which lead to two different actions. errors during writing the following detectable errors could occur during writing data into the T5557: wrong number of field clocks between two gaps (i.e., not a valid ?1? or ?0? pulse stream) password mode is activated and the password does not match the contents of block 7 the number of bits received in the command sequence is incorrect valid bit counts accepted by the T5557 are: if any of these erroneous conditions were detected, the T5557 enters regular-read mode, starting with block 1 of the page defined in the command sequence. errors before/during programming if the command sequence was received successfully, the following error could still prevent programming: the lock bit of the addressed block is set already in case of a locked block, programming mode will not be entered. the T5557 reverts to block-read mode continuously transmitting the currently addressed block. if the command sequence is validated and the addressed block is not write protected, the new data will be programmed into the eeprom memory. the new state of the block write protection bit (lock bit) will be programmed at the same time accordingly. each programming cycle consists of 4 consecutive steps: erase block, erase verification (data = ?0?), programming, write verification (corresponding data bits = ?1?). if a data verification error is detected after an executed data block programming, the tag will stop modulation (modulation defeat) until a new command is transmitted. password write 70 bits (pwd = 1) standard write 38 bits (pwd = 0) aor wake up 34 bits (pwd = 1) direct access with pwd 38 bits (pwd = 1) direct access 6 bits (pwd = 0) reset command 2 bits page 0/1 regular-read 2 bits
13 T5557 4517f?rfid?11/03 figure 15. T5557 functional diagram T5557 in extended mode (x-mode) in general, the block 0 setting of the master key (bits 1 to 4) to the value ?6? or ?9? together with the x-mode bit will enable the extended mode functions. master key = ?9?: test mode access and extended mode are both enabled. master key = ?6?: any test mode access will be denied but the extended mode is still enabled. any other master key setting will prevent the activation of the T5557 extended mode options, even when the x-mode bit is set. binary bit-rate generator in extended mode the data rate is binary programmable to operate at any data rate between rf/2 and rf/128 as given in the formula below. data rate = rf/(2n+2) setup modes command decode write number of bits password check lock bit check program & verify modulation defeat fail data = old ok data = new data verification failed fail data = old gap command mode fail data = old power - on reset op(00) write op(1p)* op(01) start gap regular - read mode addr = 1 .. maxblk block - read mode addr = current gap single gap aor mode aor = 1 aor = 0 page 0 or 1 * p = page selector direct access op (1p)* page 0 op (1p)* op(10..) op(11..) page 1 page 0 test-mode if master key <> 6 reset to page 0
14 T5557 4517f?rfid?11/03 otp functionality if the otp bit is set to ?1?, all memory blocks are write protected and behave as if all lock bits are set to 1. if the master key is set to ?6? additionally, the T5557 mode of operation is locked forever (= otp functionality). if the master key is set to ?9?, the test-mode access allows the re-configuration of the tag again. figure 16. block 0 ? configuration map in extended mode (x-mode) table 4. T5557 types of modulation in extended mode notes: 1. a common multiple of bitrate and fsk frequencies is recommended. 2. in psk mode the selected data rate has to be an integer multiple of the psk sub-carrier frequency. sst-sequence start marker master key note 1), 2) l 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 1 0 0 1 0 0 0 0 1 data bit rate 00 01 10 11 rf/2 rf/4 rf/8 res. 00000 00001 00010 00011 00100 00101 01000 10000 11000 direct psk1 psk2 psk3 fsk1 fsk2 manchester biphase ('50) biphase ('57) psk- cf aor otp max- block 1) if master key = 6 and bit 15 set, then test-mode access is disabled and extended mode is active 2) if master key = 9 and bit 15 set, then extended mode is enabled modulation 0unlocked 1locked lock bit pwd n5 n4 n3 n2 n1 n0 rf/(2n+2) x-mode fast write inverse data por-delay mode direct data output encoding inverse data output encoding fsk1 (1) fsk/5-/8 ?0? = rf/5; ?1? = rf/8 fsk/8-/5 ?0? = rf/8; ?1? = rf/5 (= fsk1a) fsk2 (1) fsk/10-/8 ?0? = rf/10; ?1? = rf/8 fsk/8-/10 ?0? = rf/8; ?1? = rf/10 (= fsk2a) psk1 (2) phase change when input changes phase change when input changes psk2 (2) phase change on bit clock if input high phase change on bit clock if input low psk3 (2) phase change on rising edge of input phase change on falling edge of input manchester ?0? = falling edge, ?1?= rising edge on mid-bit ?1? = falling edge, ?1?= rising edge on mid-bit biphase 1 (?50) ?1? creates an additional mid-bit change ?0? creates an additional mid-bit change biphase 2 (?57) ?0? creates an additional mid-bit change ?1? creates an additional mid-bit change nrz ?1?= damping on, ?0?= damping off ?0?= damping on, ?1?= damping off
15 T5557 4517f?rfid?11/03 sequence start marker figure 17. T5557 sequence start marker in extended mode the T5557 sequence start marker is a special damping pattern, which may be used to synchronize the reader. the sequence start mark er consists of two bits (?01? or ?10?) which are inserted as header before the first block to be transmitted if the bit 29 in extended mode ist set. at the start of a new block sequence, the value of the two bits is inverted. inverse data output the T5557 supports in its extended mode (x-mode) an inverse data output option. if inverse data is enabled, the modulator as shown in figure 18 works on inverted data (see table 4 on page 14). this function is supported for all basic types of encoding. figure 18. data encoder for inverse data output fast write in the optional fast write mode the time between two gaps is nominally 12 field clocks for a ?0? and 27 field clocks for a ?1?. when there is no gap for more than 32 field clocks after a previous gap, the T5557 will exit the write mode. please refer to table 5 and figure 8 on page 7. table 5. fast write data decoding schemes block 1 block 2 maxblk block 1 10 10 01 block-read mode regular-read mode sequence start marker block 2 maxblk 10 block n 01 block n 10 block n 01 block n 10 block n 01 modulator xor inverse data output d sync clk r intern out data data output data clock psk1 psk2 psk3 direct/nrz fsk1 fsk2 manchester biphase mux parameters remark symbol min. max. unit start gap ? s gap 10 50 fc write gap normal write mode wn gap 8 30 fc fast write mode wf gap 8 20 fc write data in normal mode ?0? data d 0 16 31 fc ?1? data d 1 48 63 fc write data in fast mode ?0? data d 0 8 15 fc ?1? data d 1 24 31 fc
16 T5557 4517f?rfid?11/03 figure 19. example of manchester coding with data rate rf/16 figure 20. example of biphase coding with data rate rf/16 r f - f i e l d 9 2 1 1 6 8 1 8 1 8 9 1 6 1 6 1 8 9 1 6 9 2 1 1 6 8 1 8 9 1 6 i n v e r t e d m o d u l a t o r d a t a s t r e a m 1 0 0 1 8 f c 8 f c d a t a r a t e = 1 0 m a n c h e s t e r c o d e d 1 6 f i e l d c l o c k s ( f c ) s i g n a l r f - f i e l d 9 2 1 1 6 8 1 8 1 8 9 1 6 1 6 1 8 9 1 6 9 2 1 1 6 8 1 8 9 1 6 i n v e r t e d m o d u l a t o r s i g n a l b i p h a s e c o d e d d a t a s t r e a m 1 0 0 1 8 f c 8 f c d a t a r a t e = 1 0 1 6 f i e l d c l o c k s ( f c )
17 T5557 4517f?rfid?11/03 figure 21. example: fsk1a coding with data rate rf/40, subcarrier f 0 = rf/8, f 1 = rf/5 figure 22. example of psk1 coding with data rate rf/16 d a t a s t r e a m 1 0 0 1 d a t a r a t e = 1 0 r f - f i e l d 1 5 1 8 1 8 1 8 5 1 5 i n v e r t e d m o d u l a t o r s i g n a l 4 0 f i e l d c l o c k s ( f c ) f = r f / 8 , 0 f = r f / 5 1 1 d a t a s t r e a m 0 0 1 1 0 r f - f i e l d 2 1 8 9 1 6 1 8 1 6 1 8 1 6 1 8 1 6 1 8 1 6 1 8 i n v e r t e d m o d u l a t o r s i g n a l s u b c a r r i e r r f / 2 1 8 f c 8 f c d a t a r a t e = 1 6 f i e l d c l o c k s ( f c )
18 T5557 4517f?rfid?11/03 figure 23. example of psk2 coding with data rate rf/16 figure 24. example of psk3 coding with data rate rf/16 d a t a s s t r e a m 0 0 1 1 0 r f - f i e l d 2 1 8 9 1 6 1 8 1 6 1 8 1 6 1 8 1 6 1 8 1 6 1 8 i n v e r t e d m o d u l a t o r s i g n a l s u b c a r r i e r r f / 2 1 8 f c 8 f c d a t a r a t e = 1 6 f i e l d c l o c k s ( f c ) d a t a s t r e a m 1 0 0 1 8 f c 8 f c d a t a r a t e = 1 0 r f - f i e l d 2 1 8 9 1 6 1 8 1 6 1 8 1 6 1 8 1 6 1 8 1 6 1 8 i n v e r t e d m o d u l a t o r s i g n a l s u b c a r r i e r r f / 2 1 6 f i e l d c l o c k s ( f c )
19 T5557 4517f?rfid?11/03 absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability . parameters symbol value unit maximum dc current into coil 1/coil 2 i coil 20 ma maximum ac current into coil 1/coil 2 f = 125 khz i coil p 20 ma power dissipation (dice) (free-air condition, time of application: 1 s) p tot 100 mw electrostatic discharge maximum to mil-standard 883 c method 3015 v max 4000 v operating ambient temperature range t amb -40 to +85 c storage temperature range (data retention reduced) t stg -40 to +150 c electrical characteristics t amb = +25 c; f coil = 125 khz; unless otherwise specified no. parameters test conditions symbol min. typ. max. unit type* 1 rf frequency range f rf 100 125 150 khz 2.1 supply current (without current consumed by the external lc tank circuit) t amb = 25 c (1) (see figure 24 on page 18) i dd 1.5 3 a t 2.2 read ? full temperature range 24aq 2.3 programming full temperature range 25 40 a q 3.1 coil voltage (ac supply) por threshold (50 mv hysteresis) v coil pp 3.2 3.6 4.0 v q 3.2 read mode and write command (2) 6v clamp vq 3.3 program eeprom (2) 8v clamp vq 4 start-up time v coil pp = 6 v t startup 2.5 3 ms q 5 clamp voltage 10 ma current into coil 1/2 v clamp 17 23 v t *) type means: t: directly or indirectly tested during production; q: guaranteed based on initial product qualification data notes: 1. i dd measurement setup r = 100 k; v clk = v coil = 5 v: eeprom programmed to 00 ... 000 (erase all); chip in modulation defeat. i dd = (v outmax - v clk )/r 2. current into coil 1/coil 2 is limited to 10 ma. the damping circuitry has the same structure as the e5550. the damping characteristics are defined by the internally limited supply voltage (= minimum ac coil voltage) 3. v mod measurement setup: r = 2.3 k; v clk = 3 v; setup with modulation enabled (see figure 25 on page 20). 4. since eeprom performance is influenced by assembly processes, atmel confirms the parameters for dow (tested dice on uncutted wafer) delivery. 5. the tolerance of the on-chip resonance capacitor c r is 10% at 3 over whole production. the capacitor tolerance is 3% at 3 on a wafer basis. 6. the tolerance of the microcodule resonance capacitor c r is 5% at 3 over whole production.
20 T5557 4517f?rfid?11/03 figure 25. measurement setup for i dd and v mod 6.1 modulation parameters v coilpp = 6 v on test circuit generator and modulation on (3) v mod pp 4.2 4.8 v t 6.2 i mod pp 400 600 a t 6.3 thermal stability v mod /t amb -6 mv/ cq 7 programming time from last command gap to re-enter read mode (64 + 648 internal clocks) t prog 55.76mst 8 endurance erase all / write all (4) n cycle 100000 cycles q 9.1 data retention top = 55 c (4) t retention 10 20 50 years 9.2 top = 150 c (4) t retention 96 hrs t 9.3 top = 250 c (4) t retention 24 hrs q 10 resonance capacitor mask option (5) c r 70 78 86 pf t 11.1 microdule capacitor parameters capacitance tolerance t amb c r 313.5 330 346.5 pf t 11.2 temperature coefficient tbd tbd tbd tbd tbd tbd 11.3 tbd tbd tbd tbd tbd tbd electrical characteristics t amb = +25 c; f coil = 125 khz; unless otherwise specified no. parameters test conditions symbol min. typ. max. unit type* *) type means: t: directly or indirectly tested during production; q: guaranteed based on initial product qualification data notes: 1. i dd measurement setup r = 100 k; v clk = v coil = 5 v: eeprom programmed to 00 ... 000 (erase all); chip in modulation defeat. i dd = (v outmax - v clk )/r 2. current into coil 1/coil 2 is limited to 10 ma. the damping circuitry has the same structure as the e5550. the damping characteristics are defined by the internally limited supply voltage (= minimum ac coil voltage) 3. v mod measurement setup: r = 2.3 k; v clk = 3 v; setup with modulation enabled (see figure 25 on page 20). 4. since eeprom performance is influenced by assembly processes, atmel confirms the parameters for dow (tested dice on uncutted wafer) delivery. 5. the tolerance of the on-chip resonance capacitor c r is 10% at 3 over whole production. the capacitor tolerance is 3% at 3 on a wafer basis. 6. the tolerance of the microcodule resonance capacitor c r is 5% at 3 over whole production. coil 1 T5557 coil 2 substrate - + v clk v outmax r 750 750 bat68 bat68
21 T5557 4517f?rfid?11/03 ordering information (2) notes: 1. unique customer id code programming according to figure 5 is linked to a minimum order quantity of 1 mio parts per year. 2. for available order codes refer to atmel sales/marketing. ordering examples (recommended) T555711-ddw tested dice on unsawn 6? wafer, thickness 300 m, no on-chip capacitor, no damping during por initialisation; especially for iso 11784/785 and access control applications available order codes T555711-ddw, ddt, tas T555714-ddw, dbw, tas T555715-pae 11 - 2 pads without on-chip c see figure 26 on page 22 14 - 4 pads with on-chip 75 pf see figure 27 on page 23 15 - micro - module with 330 pf see figure 29 on page 24 01 - 2 pads without c; damping during initialisation see figure 26 on page 22 customer id (1) - atmel standard (corresponds to ?00") m01 - customer 'x' unique id code (1) - ddw - dice on wafer, 6" un-sawn wafer, thickness 300 m - ddt - dice in tray (waffle pack), thickness 300 m - dbw - dice on solder bumped wafer, thickness 390 m see figure 27 on page 23 sn63pb37 on 5 m ni/au, height 70 m see figure 28 on page 23 - tas - so8 package see figure 31 on page 26 - pae - moa2 micro-module see figure 29 on page 24 x x x t 5 5 5 7 b m c c - package drawing a
22 T5557 4517f?rfid?11/03 package information figure 26. 2 pad layout for wire bonding c2 994 934 94 149.5 134.5 497 125 125 dimensions in m T5557 124 87 72
23 T5557 4517f?rfid?11/03 figure 27. 4 pad flip-chip version with 70 m solder bumps figure 28. solder bump on niau c2 994 934 94 157 142 497 100 100 dimensions in m T5557c4 60 60 124 97 107 92 82 passivation al bondpad ni pbsn 70m
24 T5557 4517f?rfid?11/03 figure 29. wafer map failed die identification every die on the wafer not passing atmel test sequence is marked with inch. the inch dot specification: dot size: 200 m position: center of die color: black
25 T5557 4517f?rfid?11/03 figure 30. noa2 micromodule
26 T5557 4517f?rfid?11/03 figure 31. shipping reel ?329,6 120 (3x) 16,7 ?171 ?175 r1,14 ?13 2,3 41,4 to max 43,0 ?298,5 2,2 2
27 T5557 4517f?rfid?11/03 figure 32. so8 package figure 33. pinning so8 technical drawings according to din specifications package so8 dimensions in mm 5.00 4.85 0.4 1.27 3.81 1.4 0.25 0.10 5.2 4.8 3.7 3.8 6.15 5.85 0.2 85 14 8 7 6 5 1 2 3 4 coil 2 coil 1 nc nc nc nc nc nc
28 T5557 4517f?rfid?11/03
printed on recycled paper. disclaimer: atmel corporation makes no warranty for the use of its products, other than those expressly contained in the company?s standar d warranty which is detailed in atmel?s terms and conditions located on the company?s web site. the company assumes no responsibi lity for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time wi thout notice, and does not make any commitment to update the information contained her ein. no licenses to patents or other intellectual property of atmel are granted by the company in connection with the sale of atmel produc ts, expressly or by implication. atmel?s products are not aut horized for use as critical components in life support devices or systems. atmel corporation atmel operations 2325 orchard parkway san jose, ca 95131, usa tel: 1(408) 441-0311 fax: 1(408) 487-2600 regional headquarters europe atmel sarl route des arsenaux 41 case postale 80 ch-1705 fribourg switzerland tel: (41) 26-426-5555 fax: (41) 26-426-5500 asia room 1219 chinachem golden plaza 77 mody road tsimshatsui east kowloon hong kong tel: (852) 2721-9778 fax: (852) 2722-1369 japan 9f, tonetsu shinkawa bldg. 1-24-8 shinkawa chuo-ku, tokyo 104-0033 japan tel: (81) 3-3523-3551 fax: (81) 3-3523-7581 memory 2325 orchard parkway san jose, ca 95131, usa tel: 1(408) 441-0311 fax: 1(408) 436-4314 microcontrollers 2325 orchard parkway san jose, ca 95131, usa tel: 1(408) 441-0311 fax: 1(408) 436-4314 la chantrerie bp 70602 44306 nantes cedex 3, france tel: (33) 2-40-18-18-18 fax: (33) 2-40-18-19-60 asic/assp/smart cards zone industrielle 13106 rousset cedex, france tel: (33) 4-42-53-60-00 fax: (33) 4-42-53-60-01 1150 east cheyenne mtn. blvd. colorado springs, co 80906, usa tel: 1(719) 576-3300 fax: 1(719) 540-1759 scottish enterprise technology park maxwell building east kilbride g75 0qr, scotland tel: (44) 1355-803-000 fax: (44) 1355-242-743 rf/automotive theresienstrasse 2 postfach 3535 74025 heilbronn, germany tel: (49) 71-31-67-0 fax: (49) 71-31-67-2340 1150 east cheyenne mtn. blvd. colorado springs, co 80906, usa tel: 1(719) 576-3300 fax: 1(719) 540-1759 biometrics/imaging/hi-rel mpu/ high speed converters/rf datacom avenue de rochepleine bp 123 38521 saint-egreve cedex, france tel: (33) 4-76-58-30-00 fax: (33) 4-76-58-34-80 literature requests www.atmel.com/literature 4517f?rfid?11/03 ? atmel corporation 2003 . all rights reserved. atmel ? and combinations thereof are the registered tradem arks of atmel corporation or its subsidiaries. other terms and product names may be the trademarks of others.

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